[18p-A23-1~17] Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP) | The 85th JSAP Autumn Meeting 2024

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Session Details

Symposium (Oral)Symposium : Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

[18p-A23-1~17]Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

Wed. Sep 18, 2024 1:30 PM - 7:30 PM JST
Wed. Sep 18, 2024 4:30 AM - 10:30 AM UTC

A23 (TOKI MESSE 2F)

Satoshi Hamaguchi(Osaka Univ.), Takeshi Momose(Kumamoto Univ.), Yukihiro Shimogaki(Univ. of Tokyo)

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1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[18p-A23-1]Atomic Layer Deposition using Highly Reactive Reactants and Precursors

〇Hideharu Shimizu¹ (1.Taiyo Nippon Sanso)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[18p-A23-2]Reaction pathway analysis and molecular design of ALD precursor using a universal machine learned force field

〇Yusuke Asano¹ (1.Preferred Computational Chemistry)

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2:15 PM - 2:45 PM JST(5:15 AM - 5:45 AM UTC)

[18p-A23-3]Room-temperature atomic layer deposition and its application for combinative oxide deposition

〇Fumihiko Hirose¹ (1.Yamagata Univ.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[18p-A23-4]Observation of competitive adsorption of DMZ and TMA in sequential adsorption of room temperature atomic layer deposition

〇Haruto Suzuki¹, Ryo Miyazawa¹, Satoshi Suzaki¹, Masanori Miura¹, Fumihiko Hirose¹ (1.Yamagata Univ.)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[18p-A23-5]High-precision in-situ monitoring of ALD adsorption and reaction processes using QCM

Yuxuan Wu¹, Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, 〇Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[18p-A23-6]Estimation of Vapor Pressure of Metal Complex for ALD by COSMO-SAC method

〇Noboru Sato¹, Yuxuan Wu¹, Jun Yamaguchi¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

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3:45 PM - 4:15 PM JST(6:45 AM - 7:15 AM UTC)

[18p-A23-7]Surface Reactions in Atomic layer Etching Processing

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[18p-A23-8]Atomic Layer Etching of Cu Using Alternating Cycles of Hexafluoroacetylacetone and O₂ Plasma

〇Yusuke Nakatani¹, Andrew Kaye², Yasushi Sonoda¹, Motohiro Tanaka¹, Kenji Maeda¹, Sumit Agarwal² (1.Hitachi High-Tech, 2.Colorado School of Mines)

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4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[18p-A23-9]Atomic layer etching of dielectric films using HF containing plasma at low temperature

〇Makoto Sekine¹ (1.Nagoya Univ.)

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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A23-10]Selective removal of single-layer graphene on SiO₂ by remote oxygen plasma

〇(DC)Liugang Hu¹, Kenji Ishikawa², Thi-Thuy-Nga Nguyen², Shih-Nan Hsiao², Masaru Hori² (1.Nagoya Univ., 2.Nagoya Univ. Ctr. Low Temp. Plasma)

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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[18p-A23-11]Evaluation of RF plasma in ALD chamber and ALD growth of β-Ga₂O₃ thin films

〇(B)Shodai Ata¹, Ryuto Ichikawa¹, Keigo Naito¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ.)

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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[18p-A23-12]Atomic layer deposition of polycrystalline GaN thin films using GaCp*

〇Fumikazu Mizutani¹, Nobutaka Takahashi¹ (1.Kojundo Chem. Lab.)

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6:00 PM - 6:30 PM JST(9:00 AM - 9:30 AM UTC)

[18p-A23-13]Highly-Selective Co Thin Film Formation Process Utilizing Combined ALD and ALE

〇Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, Takeshi Momose¹, Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

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6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[18p-A23-14]In-situ observation on the initial growth of Co-ALD by optical reflectance monitoring

〇Naoki Tamaoki¹, Shunsuke Kimura¹, Yoshida Koki¹, Yamaguchi Jun¹, Sato Noboru¹, Tsukune Atsuhiro¹, Momose Ken¹, Shimogaki Yukihiro¹ (1.The University of Tokyo)

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6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[18p-A23-15]Consideration of the effect of HfO₂/ZrO₂ interfaces on ferroelectric phase formation in HfO₂/ZrO₂ nanolaminate thin films

〇Takashi Onaya¹, Yasuhiro Sakuragawa¹, Rina Takahisa¹, Koji Kita¹ (1.GSFS, The Univ. of Tokyo)

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7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)

[18p-A23-16]Growth mechanism of ALD-Ga₂O₃ thin films

〇Ryuto Ichikawa¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ.)

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7:15 PM - 7:30 PM JST(10:15 AM - 10:30 AM UTC)

[18p-A23-17]Crystallographic orientation dependence of HfO₂-based ultra-thin film growth on β-Ga₂O₃

〇(M1)Katsuhiro K Furukawa¹, Ryuto Ichikawa¹, Shodai Ata¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metro. Univ.)

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Session Details

[18p-A23-1~17]Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

[18p-A23-1]Atomic Layer Deposition using Highly Reactive Reactants and Precursors

[18p-A23-2]Reaction pathway analysis and molecular design of ALD precursor using a universal machine learned force field

[18p-A23-3]Room-temperature atomic layer deposition and its application for combinative oxide deposition

[18p-A23-4]Observation of competitive adsorption of DMZ and TMA in sequential adsorption of room temperature atomic layer deposition

[18p-A23-5]High-precision in-situ monitoring of ALD adsorption and reaction processes using QCM

[18p-A23-6]Estimation of Vapor Pressure of Metal Complex for ALD by COSMO-SAC method

[18p-A23-7]Surface Reactions in Atomic layer Etching Processing

[18p-A23-8]Atomic Layer Etching of Cu Using Alternating Cycles of Hexafluoroacetylacetone and O2 Plasma

[18p-A23-9]Atomic layer etching of dielectric films using HF containing plasma at low temperature

[18p-A23-10]Selective removal of single-layer graphene on SiO2 by remote oxygen plasma

[18p-A23-11]Evaluation of RF plasma in ALD chamber and ALD growth of β-Ga2O3 thin films

[18p-A23-12]Atomic layer deposition of polycrystalline GaN thin films using GaCp*

[18p-A23-13]Highly-Selective Co Thin Film Formation Process Utilizing Combined ALD and ALE

[18p-A23-14]In-situ observation on the initial growth of Co-ALD by optical reflectance monitoring

[18p-A23-15]Consideration of the effect of HfO2/ZrO2 interfaces on ferroelectric phase formation in HfO2/ZrO2 nanolaminate thin films

[18p-A23-16]Growth mechanism of ALD-Ga2O3 thin films

[18p-A23-17]Crystallographic orientation dependence of HfO2-based ultra-thin film growth on β-Ga2O3

[18p-A23-8]Atomic Layer Etching of Cu Using Alternating Cycles of Hexafluoroacetylacetone and O₂ Plasma

[18p-A23-10]Selective removal of single-layer graphene on SiO₂ by remote oxygen plasma

[18p-A23-11]Evaluation of RF plasma in ALD chamber and ALD growth of β-Ga₂O₃ thin films

[18p-A23-15]Consideration of the effect of HfO₂/ZrO₂ interfaces on ferroelectric phase formation in HfO₂/ZrO₂ nanolaminate thin films

[18p-A23-16]Growth mechanism of ALD-Ga₂O₃ thin films

[18p-A23-17]Crystallographic orientation dependence of HfO₂-based ultra-thin film growth on β-Ga₂O₃