The 85th JSAP Autumn Meeting 2024
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Session Details

Symposium (Oral)Symposium : Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

[18p-A23-1~17]Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

Wed. Sep 18, 2024 1:30 PM - 7:30 PM JST
Wed. Sep 18, 2024 4:30 AM - 10:30 AM UTC
A23 (TOKI MESSE 2F)
Satoshi Hamaguchi(Osaka Univ.), Takeshi Momose(Kumamoto Univ.), Yukihiro Shimogaki(Univ. of Tokyo)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[18p-A23-1]Atomic Layer Deposition using Highly Reactive Reactants and Precursors

〇Hideharu Shimizu1 (1.Taiyo Nippon Sanso)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[18p-A23-2]Reaction pathway analysis and molecular design of ALD precursor using a universal machine learned force field

〇Yusuke Asano1 (1.Preferred Computational Chemistry)
Comment()
2:15 PM - 2:45 PM JST(5:15 AM - 5:45 AM UTC)

[18p-A23-3]Room-temperature atomic layer deposition and its application for combinative oxide deposition

〇Fumihiko Hirose1 (1.Yamagata Univ.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[18p-A23-4]Observation of competitive adsorption of DMZ and TMA in sequential adsorption of room temperature atomic layer deposition

〇Haruto Suzuki1, Ryo Miyazawa1, Satoshi Suzaki1, Masanori Miura1, Fumihiko Hirose1 (1.Yamagata Univ.)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[18p-A23-5]High-precision in-situ monitoring of ALD adsorption and reaction processes using QCM

Yuxuan Wu1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, 〇Yukihiro Shimogaki1 (1.The Univ. Tokyo)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[18p-A23-6]Estimation of Vapor Pressure of Metal Complex for ALD by COSMO-SAC method

〇Noboru Sato1, Yuxuan Wu1, Jun Yamaguchi1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
Comment()
3:45 PM - 4:15 PM JST(6:45 AM - 7:15 AM UTC)

[18p-A23-7]Surface Reactions in Atomic layer Etching Processing

〇Kazuhiro Karahashi1, Tomoko Ito1, Satoshi Hamaguchi1 (1.Osaka Univ.)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[18p-A23-8]Atomic Layer Etching of Cu Using Alternating Cycles of Hexafluoroacetylacetone and O2 Plasma

〇Yusuke Nakatani1, Andrew Kaye2, Yasushi Sonoda1, Motohiro Tanaka1, Kenji Maeda1, Sumit Agarwal2 (1.Hitachi High-Tech, 2.Colorado School of Mines)
Comment()
4:30 PM - 5:00 PM JST(7:30 AM - 8:00 AM UTC)

[18p-A23-9]Atomic layer etching of dielectric films using HF containing plasma at low temperature

〇Makoto Sekine1 (1.Nagoya Univ.)
Comment()
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A23-10]Selective removal of single-layer graphene on SiO2 by remote oxygen plasma

〇(DC)Liugang Hu1, Kenji Ishikawa2, Thi-Thuy-Nga Nguyen2, Shih-Nan Hsiao2, Masaru Hori2 (1.Nagoya Univ., 2.Nagoya Univ. Ctr. Low Temp. Plasma)
Comment()
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[18p-A23-11]Evaluation of RF plasma in ALD chamber and ALD growth of β-Ga2O3 thin films

〇(B)Shodai Ata1, Ryuto Ichikawa1, Keigo Naito1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metropolitan Univ.)
Comment()
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[18p-A23-12]Atomic layer deposition of polycrystalline GaN thin films using GaCp*

〇Fumikazu Mizutani1, Nobutaka Takahashi1 (1.Kojundo Chem. Lab.)
Comment()
6:00 PM - 6:30 PM JST(9:00 AM - 9:30 AM UTC)

[18p-A23-13]Highly-Selective Co Thin Film Formation Process Utilizing Combined ALD and ALE

〇Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Takeshi Momose1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
Comment()
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[18p-A23-14]In-situ observation on the initial growth of Co-ALD by optical reflectance monitoring

〇Naoki Tamaoki1, Shunsuke Kimura1, Yoshida Koki1, Yamaguchi Jun1, Sato Noboru1, Tsukune Atsuhiro1, Momose Ken1, Shimogaki Yukihiro1 (1.The University of Tokyo)
Comment()
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[18p-A23-15]Consideration of the effect of HfO2/ZrO2 interfaces on ferroelectric phase formation in HfO2/ZrO2 nanolaminate thin films

〇Takashi Onaya1, Yasuhiro Sakuragawa1, Rina Takahisa1, Koji Kita1 (1.GSFS, The Univ. of Tokyo)
Comment()
7:00 PM - 7:15 PM JST(10:00 AM - 10:15 AM UTC)

[18p-A23-16]Growth mechanism of ALD-Ga2O3 thin films

〇Ryuto Ichikawa1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metropolitan Univ.)
Comment()
7:15 PM - 7:30 PM JST(10:15 AM - 10:30 AM UTC)

[18p-A23-17]Crystallographic orientation dependence of HfO2-based ultra-thin film growth on β-Ga2O3

〇(M1)Katsuhiro K Furukawa1, Ryuto Ichikawa1, Shodai Ata1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ.)
Comment()
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