[18p-A23-1~17] Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

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[18p-A23-12] Atomic layer deposition of polycrystalline GaN thin films using GaCp*

〇Fumikazu Mizutani¹, Nobutaka Takahashi¹ (1.Kojundo Chem. Lab.)

Keywords:

atomic layer deposition,gallium precursor,polycrystalline GaN thin film

Using GaCp* as a precursor, a GaN thin film was deposited on a Ga₂O₃ film by an ABC-type ALD method that used a mixed gas plasma of NH₃ and H₂ for ligand removal and N₂ plasma for nitridation as co-reactants. With this method, a high-purity polycrystalline GaN film could be deposited even with ALD at a relatively low growth temperature of 200°C, without the need for high-temperature heat treatment such as annealing.