[18p-A23-1~17] Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[18p-A23-2] Reaction pathway analysis and molecular design of ALD precursor using a universal machine learned force field

〇Yusuke Asano¹ (1.Preferred Computational Chemistry)

Keywords:

ALD,reaction pathway analysis,molecular design

Atomic Layer Deposition (ALD) is a widely used process for forming metal thin films in semiconductor device fabrication. In this study, we analyze the surface chemical reaction mechanisms of ALD precursors using a universal machine-learned force field known as the PreFerred Potential. The insights gained from this analysis have led us to propose a method for more effective molecular design of ALD precursors.