[18p-A23-1~17] Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

2:15 PM - 2:45 PM JST(5:15 AM - 5:45 AM UTC)

[18p-A23-3] Room-temperature atomic layer deposition and its application for combinative oxide deposition

〇Fumihiko Hirose¹ (1.Yamagata Univ.)

Keywords:

Atomic layer deposition,Combinative oxide

In the field of the atomic layer deposition, it has been attempted to lower the process temperature for the production of the organic electronics. In our laboratory, the room temperature atomic layer deposition was developed with the plasma excited humidified argon. In the last decades, various kinds of oxides were grown at RT. Furthermore, we developed RT-ALD of combinative oxides with the sequential absorption. In the conference, the principal of RT ALD will be explained and the experimental results of zinc titanate ALD will be released.