[18p-A23-1~17] Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[18p-A23-5] High-precision in-situ monitoring of ALD adsorption and reaction processes using QCM

Yuxuan Wu¹, Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, 〇Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

Keywords:

ULSI device,Atomic Layer Deposition,Quartz Crystal Microbalance

The adsorption and desorption of precursor and the reaction status in atomic layer deposition (ALD) were monitored using a high-precision QCM. Technical points to achieve high-precision, high-speed measurements will be discussed in the conference.