[18p-A23-1~17] Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[18p-A23-8] Atomic Layer Etching of Cu Using Alternating Cycles of Hexafluoroacetylacetone and O₂ Plasma

〇Yusuke Nakatani¹, Andrew Kaye², Yasushi Sonoda¹, Motohiro Tanaka¹, Kenji Maeda¹, Sumit Agarwal² (1.Hitachi High-Tech, 2.Colorado School of Mines)

Keywords:

Atomic Layer Etching,Cu,Hexafluoroacetylacetone

Atomic layer etching (ALE) is a critical technology in semiconductor device fabrication, including for interconnect metals such as Cu and Co. Previously, thermal ALE of Cu has been reported using alternating half-cycles of hexafluoroacetylacetone (hfacH) and O₂ or O₃ at ~275 °C. It has also been shown that hfacH cannot spontaneously etch Cu, and peroxidation of the Cu surface is required. In this presentation, we will report on ALE of Cu at a much lower temperature of 150 °C using hfacH and O₂/Ar plasma half-cycles.