[18p-A31-1~19] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-10] Surface reactions of photo-assisted etching of gallium nitrides, GaN

〇(M2)Ryoto Takahashi¹, Ryusei Sakai¹, Kenji Ishikawa², Makoto Sekine², Takayoshi Tsutsumi², Masaru Hori² (1.Nagoya Univ., 2.Nagoya Univ. cLPS)

Keywords:

etching,Gallium nitride,plasma

Gallium nitride(GaN) is attracting attention as a next-generation power device material, and high-precision etching technology is required for device fabrication. Therefore, the realization of light etching is anticipated, and it is necessary to elucidate the desorption process and products to establish a light process. In this study, considering both electronic and thermal effects in the desorption process, we clarified the desorption reactions and products involved.