[18p-A31-1~19] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A31-14] Effects of Radical Sticking Probability on Transport in High-Aspect-Ratio Holes

〇(M1)Takumi Kurushima¹, Takayoshi Tsutsumi², Makoto Sekine², Masaru Hori², Kenji Ishikawa² (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS)

Keywords:

plasma,radical,sticking probability

In high aspect ratio etching, challenges such as shape abnormalities and decreased etching rates are closely related to particle transport within the etching holes. Therefore, I focused on developing a new measurement method to quantitatively understand the sticking probability of radicals. I simulated the passage of radicals through microscale hole with varying aspect ratios, and experimental measurements confirmed that the radical passage rate decreased with increasing aspect ratio in both simulation and experiment.