[18p-A31-1~19] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[18p-A31-4] Fluorination reaction of GaN surface using electron assisted Atomic Layer Etching

Yusuke Izumi¹, 〇Takayoshi Tsutsumi¹, Hiroki Kondo², Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ., 2.Kyushu Univ.)

Keywords:

ALE,Electron Beam,surface reaction