[18p-A36-1~11] Application of Advanced Ion/Electron Microscopy for Future Nanoscale Materials and Devices

2:15 PM - 2:45 PM JST(5:15 AM - 5:45 AM UTC)English Presentation

[18p-A36-3] Evaluation of hydrogen-gas-field-ionization ion source and its application

〇Shinichi Matsubara¹, Hiroyasu Shichi¹, Tomihiro Hashizume² (1.Hitachi, Ltd. CDS, 2.Hitachi, Ltd. CER)

Keywords:

Scanning ion microscopy,Hydrogen gas field ion source,Focused Ion Beam

A gas field ionization source scanning ion microscopy (GFIS-SIM) using light element gases, such as helium or hydrogen, is expected to improve the resolution of sample-surface observation because the diffraction aberration is smaller than that of scanning electron microscopy at the same beam acceleration. GFIS-SIM using heavy element gases, such as neon or argon, is also expected to improve processing accuracy compared with conventional focused ion beam (FIB) systems equipped with liquid-metal-ionization sources or plasma-ionization sources.
We present the results of an energy analysis of hydrogen ions by ion beam retarding with an electrostatic lens. Several hydrogen ion species are generated from the hydrogen-ion GIS, among which H₃⁺ was shown to be the most suitable for surface observation through this analysis.We also propose a method of introducing a mixture of light and heavy element gases into the GFIS to eliminate the gas-venting time and speed up the switching of processing and observation functions by changing ion beams.