講演情報
[18p-A36-3]Evaluation of hydrogen-gas-field-ionization ion source and its application
〇Shinichi Matsubara1, Hiroyasu Shichi1, Tomihiro Hashizume2 (1.Hitachi, Ltd. CDS, 2.Hitachi, Ltd. CER)
キーワード：
Scanning ion microscopy、Hydrogen gas field ion source、Focused Ion Beam
A gas field ionization source scanning ion microscopy (GFIS-SIM) using light element gases, such as helium or hydrogen, is expected to improve the resolution of sample-surface observation because the diffraction aberration is smaller than that of scanning electron microscopy at the same beam acceleration. GFIS-SIM using heavy element gases, such as neon or argon, is also expected to improve processing accuracy compared with conventional focused ion beam (FIB) systems equipped with liquid-metal-ionization sources or plasma-ionization sources.
We present the results of an energy analysis of hydrogen ions by ion beam retarding with an electrostatic lens. Several hydrogen ion species are generated from the hydrogen-ion GIS, among which H3+ was shown to be the most suitable for surface observation through this analysis.We also propose a method of introducing a mixture of light and heavy element gases into the GFIS to eliminate the gas-venting time and speed up the switching of processing and observation functions by changing ion beams.
We present the results of an energy analysis of hydrogen ions by ion beam retarding with an electrostatic lens. Several hydrogen ion species are generated from the hydrogen-ion GIS, among which H3+ was shown to be the most suitable for surface observation through this analysis.We also propose a method of introducing a mixture of light and heavy element gases into the GFIS to eliminate the gas-venting time and speed up the switching of processing and observation functions by changing ion beams.
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