[18p-A36-1~11] Application of Advanced Ion/Electron Microscopy for Future Nanoscale Materials and Devices

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)English Presentation

[18p-A36-6] Charge trap memory based on MoS₂ with He⁺-irradiated h-BN as a trapping layer

〇Mahito Yamamoto¹, Takuya Iwasaki², Keiji Ueno³, Takashi Taniguchi², Kenji Watanabe², Yukinori Morita⁴, Shinichi Ogawa⁴, Yutaka Wakayama², Shu Nakaharai⁵ (1.Kansai Univ., 2.NIMS, 3.Saitama Univ., 4.AIST, 5.Tokyo Univ. Tech.)

Keywords:

two-dimensional semiconductor,charge trap memory,helium ion microscpe

In this work, we fabricated MoS₂-based charge trap memory using He⁺-irradiated hexagonal boron nitride as a charge trapping layer and found that the trap density can be tuned widely with the He⁺ dose amount.