[18p-A36-1~11] 先端イオン/電子顕微鏡技術のナノスケール材料・デバイスへの応用展開

16:00 〜 16:15英語発表

[18p-A36-6] Charge trap memory based on MoS₂ with He⁺-irradiated h-BN as a trapping layer

〇Mahito Yamamoto¹, Takuya Iwasaki², Keiji Ueno³, Takashi Taniguchi², Kenji Watanabe², Yukinori Morita⁴, Shinichi Ogawa⁴, Yutaka Wakayama², Shu Nakaharai⁵ (1.Kansai Univ., 2.NIMS, 3.Saitama Univ., 4.AIST, 5.Tokyo Univ. Tech.)

キーワード：

two-dimensional semiconductor、charge trap memory、helium ion microscpe

In this work, we fabricated MoS₂-based charge trap memory using He⁺-irradiated hexagonal boron nitride as a charge trapping layer and found that the trap density can be tuned widely with the He⁺ dose amount.