[18p-B1-1~20] 13.9 Compound solar cells

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[18p-B1-16] Reducing bonding resistance between dissimilar semiconductor substrates using RTWB

〇Shuntaro Fujii¹, Reo Aoyama¹, Yuta Nishidate¹, Moeka Chiba¹, Shuto Fujiwara¹, Keigo Saito¹, Ryuga Kikuchi¹, Kosuke Watanabe¹, Kouichi Akahane², Shiro Uchida¹ (1.Chiba Inst., 2.NICT)

Keywords:

compound solar cell

In this experiment, dissimilar semiconductor substrates with an ohmic electrode were used to achieve the target value for practical use, the junction interface resistance ρ_c ≤ 10^-2 Ωcm². The junction experiment was performed with the applied voltage of fast atom beam irradiation as a parameter. As a result, the J-V characteristics of p-InGaAs // n-GaAs were close to ohmic contact. This is because the surface flatness was improved by lowering the applied voltage.