[18p-B1-1~20] 13.9 Compound solar cells

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[18p-B1-2] Deposition of (In,Ga)₂S₃ Thin Films via Mist–CVD Method

〇Yohei Araki¹, Akihiro Funaki¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Tech.)

Keywords:

mist-CVD,buffer layer,(In,Ga)2S3

(In,Ga)₂S₃ thin film was deposited by mist-CVD method as an alternative material for n-type CdS buffer layer, which is important for improving the efficiency of Cu(In,Ga)Se₂ solar cells. The deposition was conducted in a glove box filled with nitrogen to avoid unintentional oxygen contamination. From XRD measurements and observations using an electron microscope, it was confirmed that the crystal structure changes depending on the composition ratio of In and Ga. It was also confirmed that the band gap widens as the Ga content increases.