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[18p-B1-5]Surface electronic structure of Mo-back electrode in CIS-based solar cells

〇Motoya Oba1, Yukiko Kamikawa2, Takehiko Nagai2, Shogo Ishizuka2, Jiro Nishinaga2, Hitoshi Tampo2, Masami Aono1, Tetsuji Okuda1, Norio Terada1,2 (1.Kagoshima Univ., 2.AIST.)
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Keywords:

CIS solar cell

To clarify the origin of the unique electronic structure of the Mo-Se compound layer on the Mo electrode surface in CIGS cells, which differs from MoSe2 single crystals, we evaluated the surface composition and work function of sputtered Mo films selenized and analyzed using in-situ XPS and UPS. The results showed that the selenized surface had a Mo-deficient composition and exhibited a higher work function compared to MoSe2 single crystals. Additionally, with increasing selenization temperature, Mo deficiency and work function increased, suggesting that the unique electronic structure originates from Mo deficiency.

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