[18p-B3-1~12] CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)English Presentation

[18p-B3-2] Imprint Behavior of Ferroelectric Hf_0.5Zr_0.5O₂ Thin Film: Impact of Wake-up

〇(D)Zhenhong Liu¹, Zuocheng Cai¹, Mitsuru Takenaka¹, Shinichi Takagi¹, Kasidit Toprasertpong¹ (1.Univ. Tokyo)

Keywords:

Hafnia-based ferroelectrics,reliability issues,imprint

The HZO-based ferroelectric material is of significant interest in the nonvolatile memory field. However, two representative reliability issues, wake-up and imprint, must be resolved to meet the memory requirements, which could potentially lead to a complicated operation scheme, retention concern, and write failure. In this work, the imprint is evaluated on the sample with different wake-up histories, and evidence of their relationship is obtained, which indicates that oxygen atoms/ions or oxygen vacancies inside the FE film have played a very important role, and suggests the important role of the metal/FE interface quality in the reliability issues in HZO thin films.