講演情報
[18p-B3-2]Imprint Behavior of Ferroelectric Hf0.5Zr0.5O2 Thin Film: Impact of Wake-up
〇(D)Zhenhong Liu1, Zuocheng Cai1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.Univ. Tokyo)
キーワード：
Hafnia-based ferroelectrics、reliability issues、imprint
The HZO-based ferroelectric material is of significant interest in the nonvolatile memory field. However, two representative reliability issues, wake-up and imprint, must be resolved to meet the memory requirements, which could potentially lead to a complicated operation scheme, retention concern, and write failure. In this work, the imprint is evaluated on the sample with different wake-up histories, and evidence of their relationship is obtained, which indicates that oxygen atoms/ions or oxygen vacancies inside the FE film have played a very important role, and suggests the important role of the metal/FE interface quality in the reliability issues in HZO thin films.
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