Session Details

[18p-B3-1~12]CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

Wed. Sep 18, 2024 1:00 PM - 4:15 PM JST
Wed. Sep 18, 2024 4:00 AM - 7:15 AM UTC
B3 (Exhibition Hall B)
Takao Shimizu(NIMS), Takashi Onaya(東大)

[18p-B3-1]Relationship between polarization states and computational performance in physical reservoir computing using ferroelectric-gate FETs

〇Yu Ukezeki1, Hiroto Yamada1, Norifumi Fujimura1, Tokuji Yokomatsu2, Kazusuke Maenaka2, Kasidit Toprasertpong3, Shinichi Takagi3, Takeshi Yoshimura1 (1.Osaka Metro. Univ., 2.Univ. of Hyogo, 3.The univ. of Tokyo)
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[18p-B3-2]Imprint Behavior of Ferroelectric Hf0.5Zr0.5O2 Thin Film: Impact of Wake-up

〇(D)Zhenhong Liu1, Zuocheng Cai1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.Univ. Tokyo)
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[18p-B3-3]Frequency and temperature dependence of wake-up characteristics and physical mechanisms in HZO ferroelectric capacitors

〇Kosuke Ito1, Kento Tahara1, Makoto Kawano1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.The Univ. of Tokyo, School of Engineering)
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[18p-B3-4]Correlative Behavior between Defect Generation and Ferroelectricity in First Application of Electric field to Hf0.5Zr0.5O2 MFM capacitors

〇Yukinori Morita1, Shutaro Asanuma1, Hiroyuki Ota1, Shinji Migita1 (1.AIST)
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[18p-B3-5]Ferroelectricity disappearance in ultra-thin HfO2 capacitor

〇Akira Toriumi1, Shinji Migita2 (1.Free Engineer, 2.AIST)
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[18p-B3-6]A view of polarization switching kinetics from polarization switching time in ferroelectric HfO2

〇Akira Toriumi1, Shinji Migita2 (1.Free Engineer, 2.AIST)
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[18p-B3-7]Evaluation of ferroelectric properties on multilayer Hf0.5Zr0.5O2 thin films with uniformly doped AlN nanocluster

〇Takahiro Kono1, Tadashi Yamaguchi1, Kazuyuki Omori1, Seiji Muranaka1 (1.Renesas Electronics Corporation)
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[18p-B3-8]Electro-optic properties of Hf0.5Zr0.5O2 thin films on (La, Sr)MnO3/SrTiO3(100)

〇(D)Afeefa Dastgir1, Yuan Xueyou1, Yufan Shen2, Daisuke Kan2, Yuichi Shimakawa2, Tomoaki Yamada1,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.Tokyo Tech, MDX)
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[18p-B3-9]Lattice spacing and ferroelectric properties of CeO2-HfO2-ZrO2 thin films

〇Kouhei Shimonosono1, Yoshiki Maekawa1, Nachi Cyaya1, Okamoto Kazuki1, Wakiko Yamaoka2, Yasushi Kawashima2, Yukari Inoue2, Hiroshi Funakubo1 (1.Tokyo Tech., 2.TDK Corp.)
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[18p-B3-10]Crystallization of Al:HfO2 Thin Films by Flash Lamp Annealing

〇Tomoya Mifune1, Hideaki Tanimura1,2, Yuma Ueno2, Hironori Fujisawa1, Seiji Nakashima1, Ai I. Osaka1, Shinichi Kato2, Takumi Mikawa2 (1.Univ. of Hyogo, 2.SCREEN Semiconductor Solutions Co., Ltd.)
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[18p-B3-11]Investigation of modeling HfO2 crystals using machine learning potentials

〇(D)Yuki Itoya1, Masaharu Kobayashi1,2 (1.Tokyo Univ. Inst., 2.Tokyo Univ. d.lab)
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[18p-B3-12]Diffusion of oxygen in amorphous HfO2

〇(M2)Yuna Motozu1, Ryusuke Nakamura1, Takeyuki Suzuki2 (1.Univ. of Shiga Pref., 2.SANKEN Osaka Univ.)
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