[18p-B3-1~12] CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[18p-B3-3] Frequency and temperature dependence of wake-up characteristics and physical mechanisms in HZO ferroelectric capacitors

〇Kosuke Ito¹, Kento Tahara¹, Makoto Kawano¹, Mitsuru Takenaka¹, Shinichi Takagi¹, Kasidit Toprasertpong¹ (1.The Univ. of Tokyo, School of Engineering)

Keywords:

ferroelectric,wake-up

In HfO2-based ferroelectrics, wake-up effect, which requires electric field cycling to induce ferroelectricity, presents a significant challenge, particularly in thin films. In this study, measurements of the frequency and temperature dependence of the wake-up characteristics in HZO ferroelectric capacitors suggest that ions moving within the ferroelectric film are involved in the wake-up effect. Furthermore, by considering the behavior of these ions, a model for the wake-up effect was proposed.