[18p-B3-1~12] CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-B3-7] Evaluation of ferroelectric properties on multilayer Hf_0.5Zr_0.5O₂ thin films with uniformly doped AlN nanocluster

〇Takahiro Kono¹, Tadashi Yamaguchi¹, Kazuyuki Omori¹, Seiji Muranaka¹ (1.Renesas Electronics Corporation)

Keywords:

Ferroelectric,Non-volatile memory,HfZrO

HfO₂-based ferroelectric thin films have attracted much attention as a non-volatile memory device material because of high compatibility of CMOS manufacturing processes and operability at low voltage. In our previous study, we reported that the doping of Al or Si nanoclusters to Hf_0.5Zr_0.5O₂ (HZO) films improves the reliability and characteristic valiation of FeFETs. In this study, we fabricated a 6nm HZO film by doping aluminum nitride (AlN) nanoclusters that can precisely control the dose of AlN nanoclustar. We demonstrate dependence of the dose of AlN nanoclustars on the remanent polarization and endurance.