[18p-C42-1~7] 2D materials and their integrated circuit and electronic device applications

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[18p-C42-2] Toward wafer-scale integrated circuit technology using two-dimensional materials

〇Kosuke Nagashio¹ (1.UTokyo)

Keywords:

2 dimensional materials,MoS2,transistor

In this presentation, I introduce the recent results on top gate MoS2 FET on sapphire substrate, where MoS2 has been grown using MOCVD by Sakuma@NIMS. By clarifying the current status and issues of FET performance on sapphire substrates, we would like to discuss future prospects.