[18p-C42-1~7] 2D materials and their integrated circuit and electronic device applications

3:15 PM - 3:45 PM JST(6:15 AM - 6:45 AM UTC)

[18p-C42-4] TMD Film Deposition using Novel Metal-organic Precursors

〇Atsushi Ogura^1,2, Hideaki Machida³ (1.Meiji Univ., 2.Meiji Renewable Energy Laboratory, 3.Gas-phase Growth Ltd.)

Keywords:

Semiconductor,Metal-organic Chemical Vpor Deposition,Transition Metal Di-Chalcogenide

Novel organic compounds were developed and TMD deposition by metal-organic CVD (MOCVD) was evaluated. The films on the flat substrate initially had a layered structure parallel to the surface, and some longitudinal growth started at a thickness of approximately more than 10 layers. Raman spectroscopy showed peaks characteristic of layered TMDs, and XPS confirmed that the composition was generally consistent with stoichiometry, with little change after about 6 months of storage. The conformality of the film on the trench substrate were good, and parallel deposition along the substrate geometry was observed at the top of the fin, corners, and sidewalls.