Presentation Information

[18p-P09-25]Preparation Conditions of Metal Oxide ETL for Improvement of CsFA Perovskite Layer Using Inkjet Method

〇Sora Yoshida1, Tomoyuki Tobe1,4, Ryoto Funayama3, Naoyuki Shibayama2, Masashi Ikegami1, Tsutomu Miyasaka2 (1.Graduate School of Engineering, Toin University of Yokohama, 2.Faculty of Biomedical Engineering, Toin University of Yokohama, 3.Kishu Giken Kogyo, Co. Ltd., 4.KISTEC)

Keywords:

Perovskite materials,Inkjet printing method,Oxide semiconductor layer

For the efficient and reliable fabrication of perovskite solar cells, we have been developing an inkjet printing method. One challenge in coating perovskite layers is establishing a uniform large-area coating method, and it is also difficult to achieve high-quality perovskite layers without using anti-solvents in spin coating methods. On the other hand, we have been researching anti-solvent-free inkjet printing methods.
This anti-solvent-free printing method significantly depends on the substrate's wettability, making the choice of oxide semiconductor electron transport layers (ETLs), such as tin oxide, very important. Therefore, this study focuses particularly on the preparation conditions of ETLs formed from tin(II) oxide dihydrate (SnO2·2H2O), aiming to enhance the efficiency of solar cells produced by inkjet printing.
As a result, a concentration of 0.01 M of SnCl2·2H2O ethanol solution provides the highest open-circuit voltage and energy conversion efficiency compared to 0.2 M of Sn.

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