[18p-P09-1~54] 12.5 Organic and hybrid solar cells

[18p-P09-44] Study of ITO deposition for Perovskite/Si tandem solar cells

〇Rin Kawanabe¹, Ryotaro Fujita¹, Yudai Kikuchi¹, Keito Hisatsune¹, Shinsuke Miyajima², Takurou Murakami³, Atsushi Kogo³, Shiro Uchida¹ (1.Chiba Inst., 2.Tokyo Tech., 3.AIST)

Keywords:

perovskite solar cell,transparent conductive oxide

Low-resistivity ITO film deposition by a low-temperature process is necessary to allow light to enter the perovskite/Si tandem solar cell from the hole transport layer side; for ITO film deposition, we aimed for resistivity 1×10^-3 Ωcm or below and transmittance 80% or above without annealing by adjusting the oxygen flow rate during film deposition. The ITO film with an oxygen flow rate ratio of 3.0% showed a minimum resistivity of 4.72×10^-4 Ωcm and an average transmittance of 87% in the visible light region.