Presentation Information
[18p-P11-1]Temperature Dependence of Growth Rate of 4H-SiC by Multi-Wafer Close-Space Sublimation (MCSS) Method
〇Mizuki Sato1, Jun Kikuchi1, Yuzuru Narita1, Hiroyuki Nagasawa2, Tetsuya Chiba3 (1.Yamagata Univ, 2.CUSIC, 3.DryChemicals)
Keywords:
4H-SiC,MCSS Method,Growth Rate
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