[18p-P11-1~3] 15.6 Group IV Compound Semiconductors (SiC)

[18p-P11-1] Temperature Dependence of Growth Rate of 4H-SiC by Multi-Wafer Close-Space Sublimation (MCSS) Method

〇Mizuki Sato¹, Jun Kikuchi¹, Yuzuru Narita¹, Hiroyuki Nagasawa², Tetsuya Chiba³ (1.Yamagata Univ, 2.CUSIC, 3.DryChemicals)

Keywords:

4H-SiC,MCSS Method,Growth Rate