Session Details
[18p-P11-1~3]15.6 Group IV Compound Semiconductors (SiC)
Wed. Sep 18, 2024 4:00 PM - 6:00 PM JST
Wed. Sep 18, 2024 7:00 AM - 9:00 AM UTC
Wed. Sep 18, 2024 7:00 AM - 9:00 AM UTC
P11 (Exhibition Hall A)
[18p-P11-1]Temperature Dependence of Growth Rate of 4H-SiC by Multi-Wafer Close-Space Sublimation (MCSS) Method
〇Mizuki Sato1, Jun Kikuchi1, Yuzuru Narita1, Hiroyuki Nagasawa2, Tetsuya Chiba3 (1.Yamagata Univ, 2.CUSIC, 3.DryChemicals)
[18p-P11-2]Sublimation Characteristics of SiC Source by Multi-Wafer Close-Space Sublimation (MCSS) Method
〇Jun Kikuchi1, Mizuki Sato1, Yuzuru Narita1, Hiroyuki Nagasawa2, Tetsuya Chiba3 (1.Yamagata Univ., 2.CUSIC, 3.DryChemicals)
[18p-P11-3]A trial of optically detected magnetic resonance (ODMR) for interfacial single photon sources in 4H-SiC MOSFET
〇(M2)Sosuke Horiuchi1, Bunta Shimabukuro1, Moriyoshi Haruyama2, Toshiharu Makino2, Hiromitsu Kato2, Mitsuo Okamoto2, Shinsuke Harada2, Takahide Umeda1 (1.Univ. of Tsukuba, 2.AIST.)