[18p-P11-1~3] 15.6 Group IV Compound Semiconductors (SiC) | The 85th JSAP Autumn Meeting 2024

Session Details

Poster presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[18p-P11-1~3]15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 18, 2024 4:00 PM - 6:00 PM JST
Wed. Sep 18, 2024 7:00 AM - 9:00 AM UTC

P11 (Exhibition Hall A)

[18p-P11-1]Temperature Dependence of Growth Rate of 4H-SiC by Multi-Wafer Close-Space Sublimation (MCSS) Method

〇Mizuki Sato¹, Jun Kikuchi¹, Yuzuru Narita¹, Hiroyuki Nagasawa², Tetsuya Chiba³ (1.Yamagata Univ, 2.CUSIC, 3.DryChemicals)

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[18p-P11-2]Sublimation Characteristics of SiC Source by Multi-Wafer Close-Space Sublimation (MCSS) Method

〇Jun Kikuchi¹, Mizuki Sato¹, Yuzuru Narita¹, Hiroyuki Nagasawa², Tetsuya Chiba³ (1.Yamagata Univ., 2.CUSIC, 3.DryChemicals)

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[18p-P11-3]A trial of optically detected magnetic resonance (ODMR) for interfacial single photon sources in 4H-SiC MOSFET

〇(M2)Sosuke Horiuchi¹, Bunta Shimabukuro¹, Moriyoshi Haruyama², Toshiharu Makino², Hiromitsu Kato², Mitsuo Okamoto², Shinsuke Harada², Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST.)

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