Presentation Information
[18p-P11-2]Sublimation Characteristics of SiC Source by Multi-Wafer Close-Space Sublimation (MCSS) Method
〇Jun Kikuchi1, Mizuki Sato1, Yuzuru Narita1, Hiroyuki Nagasawa2, Tetsuya Chiba3 (1.Yamagata Univ., 2.CUSIC, 3.DryChemicals)
Keywords:
4H-SiC,MCSS Method,Sublimation Characteristics
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