[19a-A31-1~11] 17.3 Layered materials

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A31-9] Growth technique of GaS/GaSe heterostructure nanobelt

〇Yukihiro Endo¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

Keywords:

III-VI semiconductor,metalorganic chemical vapor deposition,nanobelt

GaS/GaSe heterostructure nanobelt was synthesized by self-catalyzed VLS growth. Using MOCVD method, the heterostructure was obtained by switching supplied sources to Ga catalyst between S and Se. The composition controllability at the heterostructure interface was studied using Raman spectroscopy. As a result, we found that the supply amount of the Se source gas well controls the Se composition. On the other hand, the supply amount of the S source gas and the S residue amount in the Ga catalyst due to the reservoir effect contribute to the S composition.