[19a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[19a-B2-4] Effect of annealing conditions on optical properties in dilute nitride semiconductor nanowires

〇Hidetoshi Hashimoto^1,2, Ryoga Iida^1,2, Takuto Goto^1,2, Keisuke Minehisa^1,2, Kaito Nakama^1,2, Fumitaro Ishikawa² (1.Hokkaido Univ. Info., 2.Hokkaido Univ. RCIQE)

Keywords:

molecular beam epitaxy,semiconductor nanowire,annealing