[19a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-B2-5] Exceptional large lattice deformation in highly strained InP/InAs nanowire heterostructures with 3.2% lattice mismatch

〇Guoqiang Zhang¹, Tanaka Yusuke¹, Hibino Hiroki², Gotoh Hideki³, Sanada Haruki¹ (1.NTT BRL, 2.Kwansei Gakuin Univ., 3.Hiroshima Univ.)

Keywords:

semiconductor,nanowire,strain

It has been known that a nanowire structure can endure higher strain compared with the conventional film structure. Meanwhile, according to both experiments and theories, the capability is widely believed to be limited to the nanoscale diameter, usually < 100 nm. Here we report coherent nanowire heterostructures with a diameter and a critical thickness far beyond the previously suggested limitation by studying InP/InAs nanowire heterostructures despite a lattice mismatch as high as 3.2%. We observe exceptional lattice deformation in the heterostructure by spherical aberration corrected scanning transmission electron microscope (Cs-STEM) measurement. We further clarify the strain relaxation mechanism by comparing the lattice deformation in center and edge regions through geometric phase analysis (GPA) for STEM images.