講演情報
[19a-B2-5]Exceptional large lattice deformation in highly strained InP/InAs nanowire heterostructures with 3.2% lattice mismatch
〇章 国強1、田中 祐輔1、日比野 浩樹2、後藤 秀樹3、眞田 治樹1 (1.NTT物性基礎研、2.関西学院大、3.広島大)
キーワード：
半導体、ナノワイヤ、歪
It has been known that a nanowire structure can endure higher strain compared with the conventional film structure. Meanwhile, according to both experiments and theories, the capability is widely believed to be limited to the nanoscale diameter, usually < 100 nm. Here we report coherent nanowire heterostructures with a diameter and a critical thickness far beyond the previously suggested limitation by studying InP/InAs nanowire heterostructures despite a lattice mismatch as high as 3.2%. We observe exceptional lattice deformation in the heterostructure by spherical aberration corrected scanning transmission electron microscope (Cs-STEM) measurement. We further clarify the strain relaxation mechanism by comparing the lattice deformation in center and edge regions through geometric phase analysis (GPA) for STEM images.
コメント
コメントの閲覧・投稿にはログインが必要です。ログイン