Presentation Information
[19a-B5-5]Strain-relaxed GeSn thin film growth by nano-channel sputter epitaxy
〇Kensho Ishimaru1, Nobuyuki Tanaka1, Mizuki Kuniyoshi2, Takuma Kobayashi1, Takayoshi Shimura1,3, Heiji Watanabe1 (1.Osaka Univ., 2.ULVAC, Inc., 3.Waseda Univ.)
Keywords:
Single crystal GeSn film,Sputter epitaxy,Photoluminescence
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