The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.5 Group IV crystals and alloys

[19a-B5-1~9]15.5 Group IV crystals and alloys

Thu. Sep 19, 2024 9:30 AM - 11:45 AM JST
Thu. Sep 19, 2024 12:30 AM - 2:45 AM UTC
B5 (Exhibition Hall B)
Kentarou Sawano(Tokyo City Univ.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-B5-1][The 56th Young Scientist Presentation Award Speech] Consideration on atomic position of SiGe by spatial correlation model

〇Ryo Yokogawa1,2, Yuta Ito1, Yuiha Maeda1, Yasutomo Arai3, Ichiro Yonenaga4, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL, 3.JAXA, 4.Tohoku Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-B5-2]Bandgap Energy Evaluation of Strain-Free Bulk Si1-xGex by Photoluminescence Spectroscopy

〇Yuta Ito1, Ryo Yokogawa1,2, Takuya Minowa1, Yasutomo Arai3, Ichiro Yonenaga4, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL, 3.JAXA, 4.Tohoku Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-B5-3]Evaluation of Band Structure in Strained Single Crystalline Si1-xSnx (Ⅱ)

〇Hiroki Ishizaki1, Ryo Yokogawa1,2, Takuya Minowa1, Masashi Kurosawa3, Atsushi Ogura1,2 (1.Meiji Univ., 2.MREL, 3.Grad. Sch. of Eng., Nagoya Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[19a-B5-4]Tilting effect of sidewalls on trench-filling growth of Ge on Si

〇Takumi Maeda1, Jose A. Piedra-Lorenzana1, Keisuke Yamane1, Takeshi Hizawa1, Tetsuya Nakai2, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech., 2.SUMCO)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-B5-5]Strain-relaxed GeSn thin film growth by nano-channel sputter epitaxy

〇Kensho Ishimaru1, Nobuyuki Tanaka1, Mizuki Kuniyoshi2, Takuma Kobayashi1, Takayoshi Shimura1,3, Heiji Watanabe1 (1.Osaka Univ., 2.ULVAC, Inc., 3.Waseda Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-B5-6]Influence of Deposition Rate on Crystallinity of High-Sn-Content Ge1−xSnxEpitaxial Layers

〇Osamu Nakatsuka1,2, Taichi Kabeya1, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-B5-7]InP-lattice-matched GeSnOI MSM Photodetector by Layer Transfer Technique

〇Tatsuro Maeda1, Hiroyuki Ishii1, Wen-Hsin Chang1, Komei Takagi2, Shigehisa Shibayama2, Masashi Kurosawa2, Osamu Nakatsuka2 (1.AIST, 2.Nagoya Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[19a-B5-8]Effect of H2 introduction on epitaxial growth of GeSiSn/GeSn double barrier structure

〇Shigehisa Shibayama1, Shuto Ishimoto1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2 (1.Nagoya Univ., 2.IMass, Nagoya Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-B5-9]Growth of P/Ga codoped Ge for heavily doped n-type Ge

〇(M1C)Gaku Ishizu1, Haruto Koto1, Tomo Horota1, Yasuhiko Ishikawa1, Keisuke Yamane1 (1.Toyohashi Tec)
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