[19a-C41-1~11] 13.7 Compound and power devices, process technology and characterization

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[19a-C41-2] Two-dimensional characterization of junction barrier Schottky structure by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Haruto Yoshimura¹, Hiroshi Ohta², Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:

GaN junction barrier Schottky,scanning internal photoemission microscopy,two-dimensional characterization

We conducted two-dimensional characterization for a junction barrier Schottky (JBS) structure, which is a combination of a Schottky barrier diode (SBD) and a pn junction diode (PND), using scanning internal photoemission microscopy (SIPM). A pattern of SBDs adjacent to PNDs was observed in the photocurrent image. In additon, the line profile indicated that the signal was uniform in the PND region, while the signal was large but non-uniform in the SBD region. we demonstrated that SIPM can be used to characterize actual JBS devices.