The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[19a-C41-1~11]13.7 Compound and power devices, process technology and characterization

Thu. Sep 19, 2024 9:00 AM - 11:45 AM JST
Thu. Sep 19, 2024 12:00 AM - 2:45 AM UTC
C41 (Hotel Nikko 4F)
Toshiharu Kubo(Nagoya Inst. of Tech.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C41-1]Investigation of Current Transport Mechanism of Carbon-Doped GaN Schottky Barrier Diodes

〇Yusuke Hirayama1, Mariko Shimizu3, Toshiki Hikosaka3, Hajime Nago3, Yosuke Kajiwara3, Shinya Nunoue3, Masahiro Horita1,2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toshiba Corp.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[19a-C41-2]Two-dimensional characterization of junction barrier Schottky structure by scanning internal photoemission microscopy

〇Hiroki Imabayashi1, Haruto Yoshimura1, Hiroshi Ohta2, Tomoyoshi Mishima2, Kenji Shiojima1 (1.Univ. of Fukui, 2.Hosei Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-C41-3]Influence of surface treatment on short channel effect in GaN HEMTs

Haruki Sano1, Yoshikaze Ito1, Itsuki Yoshida1, 〇Yasuyuki Miyamoto1 (1.Tokyo Tech)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[19a-C41-4]Impact of GaN Dry Etching on Polar and Non-polar GaN MIS Interface Properties

〇Koji Yoshitsugu1, Takahiro Yamada1, Yuki Takiguchi1, Shingo Tomohisa1, Takashi Takenaga1, Yasuyuki Miyamoto2 (1.Advanced Technology R&D Center, Mitsubishi Electric Corp., 2.Tokyo Tech.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[19a-C41-5]Evaliation of depth profile of net donor density in low dose Al-ion implanted GaN layer to elucidate the origin of donor-like defects formed by ion implantation

〇Hiroko Iguchi1, Masahiro Horita2, Keita Kataoka1, Tetsuo Narita1, Hirotaka Watanabe2, Shugo Nitta2, Yoshio Honda2, Hiroshi Amano2, Jun Suda2 (1.Toyota Central R&D Labs., 2.Nagoya Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C41-6]Stability of Heavily Mg-doped p-type GaN MOS Structures with Low Hole Trap Density Against Thermal Annealing

〇Yuichi Sakagami1, Takuma Kobayashi1, Kazuki Tomigahara1, Mikito Nozaki1, Heiji Watanabe1 (1.Osaka Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-C41-7]Generation of hole traps at SiO2/p-GaN MOS interfaces by post-deposition annealing

〇Masahiro Hara1, Kazuki Tomigahara1, Mikito Nozaki1, Takuma Kobayashi1, Heiji Watanabe1 (1.Osaka Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-C41-8]Impacts of PECVD-SiO2 deposition temperature on hole traps at p-type GaN MOS interfaces

〇Masahiro Hara1, Takuma Kobayashi1, Hidetoshi Mizobata1, Mikito Nozaki1, Heiji Watanabe1 (1.Osaka Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-C41-9]Over 30 W/mm InAlGaN-HEMT in X-band

〇Atsushi Yamada1, Yuichi Minoura1, Naoko Kurahashi1, Yoichi Kamada1, Toshihiro Ohki1, Masaru Sato1, Norikazu Nakamura1 (1.Fujitsu Ltd.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[19a-C41-10]Impact of post metallization annealing in EID AlGaN/GaN MOS-HEMT

〇Takuma Nanjo1, Masayuki Furuhashi1, Tatsuro Watahiki1, Toshiyuki Oishi2, Takashi Egawa3 (1.Mitsubishi Electric Corporation, 2.Saga University, 3.Nagoya Inst. of Tech.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C41-11]Exploring Device Design of GaN HEMT-Based Gated-Anode Diodes for High-Efficiency Microwave Rectification

〇Tomoya Watanabe1, Hidemasa Takahashi1, Akio Wakejima3, Yuji Ando1,2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Kumamoto Univ.)
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