[19a-C41-1~11] 13.7 Compound and power devices, process technology and characterization | The 85th JSAP Autumn Meeting 2024

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[19a-C41-1~11]13.7 Compound and power devices, process technology and characterization

Thu. Sep 19, 2024 9:00 AM - 11:45 AM JST
Thu. Sep 19, 2024 12:00 AM - 2:45 AM UTC

C41 (Hotel Nikko 4F)

Toshiharu Kubo(Nagoya Inst. of Tech.)

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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C41-1]Investigation of Current Transport Mechanism of Carbon-Doped GaN Schottky Barrier Diodes

〇Yusuke Hirayama¹, Mariko Shimizu³, Toshiki Hikosaka³, Hajime Nago³, Yosuke Kajiwara³, Shinya Nunoue³, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toshiba Corp.)

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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[19a-C41-2]Two-dimensional characterization of junction barrier Schottky structure by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Haruto Yoshimura¹, Hiroshi Ohta², Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-C41-3]Influence of surface treatment on short channel effect in GaN HEMTs

Haruki Sano¹, Yoshikaze Ito¹, Itsuki Yoshida¹, 〇Yasuyuki Miyamoto¹ (1.Tokyo Tech)

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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[19a-C41-4]Impact of GaN Dry Etching on Polar and Non-polar GaN MIS Interface Properties

〇Koji Yoshitsugu¹, Takahiro Yamada¹, Yuki Takiguchi¹, Shingo Tomohisa¹, Takashi Takenaga¹, Yasuyuki Miyamoto² (1.Advanced Technology R&D Center, Mitsubishi Electric Corp., 2.Tokyo Tech.)

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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[19a-C41-5]Evaliation of depth profile of net donor density in low dose Al-ion implanted GaN layer to elucidate the origin of donor-like defects formed by ion implantation

〇Hiroko Iguchi¹, Masahiro Horita², Keita Kataoka¹, Tetsuo Narita¹, Hirotaka Watanabe², Shugo Nitta², Yoshio Honda², Hiroshi Amano², Jun Suda² (1.Toyota Central R&D Labs., 2.Nagoya Univ.)

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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C41-6]Stability of Heavily Mg-doped p-type GaN MOS Structures with Low Hole Trap Density Against Thermal Annealing

〇Yuichi Sakagami¹, Takuma Kobayashi¹, Kazuki Tomigahara¹, Mikito Nozaki¹, Heiji Watanabe¹ (1.Osaka Univ.)

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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-C41-7]Generation of hole traps at SiO₂/p-GaN MOS interfaces by post-deposition annealing

〇Masahiro Hara¹, Kazuki Tomigahara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.Osaka Univ.)

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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-C41-8]Impacts of PECVD-SiO₂ deposition temperature on hole traps at p-type GaN MOS interfaces

〇Masahiro Hara¹, Takuma Kobayashi¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Heiji Watanabe¹ (1.Osaka Univ.)

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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-C41-9]Over 30 W/mm InAlGaN-HEMT in X-band

〇Atsushi Yamada¹, Yuichi Minoura¹, Naoko Kurahashi¹, Yoichi Kamada¹, Toshihiro Ohki¹, Masaru Sato¹, Norikazu Nakamura¹ (1.Fujitsu Ltd.)

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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[19a-C41-10]Impact of post metallization annealing in EID AlGaN/GaN MOS-HEMT

〇Takuma Nanjo¹, Masayuki Furuhashi¹, Tatsuro Watahiki¹, Toshiyuki Oishi², Takashi Egawa³ (1.Mitsubishi Electric Corporation, 2.Saga University, 3.Nagoya Inst. of Tech.)

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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C41-11]Exploring Device Design of GaN HEMT-Based Gated-Anode Diodes for High-Efficiency Microwave Rectification

〇Tomoya Watanabe¹, Hidemasa Takahashi¹, Akio Wakejima³, Yuji Ando^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Kumamoto Univ.)

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Session Details

[19a-C41-1~11]13.7 Compound and power devices, process technology and characterization

[19a-C41-1]Investigation of Current Transport Mechanism of Carbon-Doped GaN Schottky Barrier Diodes

[19a-C41-2]Two-dimensional characterization of junction barrier Schottky structure by scanning internal photoemission microscopy

[19a-C41-3]Influence of surface treatment on short channel effect in GaN HEMTs

[19a-C41-4]Impact of GaN Dry Etching on Polar and Non-polar GaN MIS Interface Properties

[19a-C41-5]Evaliation of depth profile of net donor density in low dose Al-ion implanted GaN layer to elucidate the origin of donor-like defects formed by ion implantation

[19a-C41-6]Stability of Heavily Mg-doped p-type GaN MOS Structures with Low Hole Trap Density Against Thermal Annealing

[19a-C41-7]Generation of hole traps at SiO2/p-GaN MOS interfaces by post-deposition annealing

[19a-C41-8]Impacts of PECVD-SiO2 deposition temperature on hole traps at p-type GaN MOS interfaces

[19a-C41-9]Over 30 W/mm InAlGaN-HEMT in X-band

[19a-C41-10]Impact of post metallization annealing in EID AlGaN/GaN MOS-HEMT

[19a-C41-11]Exploring Device Design of GaN HEMT-Based Gated-Anode Diodes for High-Efficiency Microwave Rectification

[19a-C41-7]Generation of hole traps at SiO₂/p-GaN MOS interfaces by post-deposition annealing

[19a-C41-8]Impacts of PECVD-SiO₂ deposition temperature on hole traps at p-type GaN MOS interfaces