[19a-C41-1~11] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-C41-3] Influence of surface treatment on short channel effect in GaN HEMTs

Haruki Sano¹, Yoshikaze Ito¹, Itsuki Yoshida¹, 〇Yasuyuki Miyamoto¹ (1.Tokyo Tech)

Keywords:

GaN,HEMT,surface treatment

GaN HEMTs were surface treated with dilute hydrochloric acid, which is expected to be pinned on the conduction band side, and TMAH, which is expected to be pinned on the valence band side. The I_d-V_g characteristics for a device with a gate length of 200 nm showed a typical short-channel effect where the subthreshold slope increased with increasing drain voltage after dilute hydrochloric acid treatment, but after TMAH treatment, the drain voltage dependence of the subthreshold characteristics was less pronounced and the slope steepened.