[19a-C41-1~11] 13.7 Compound and power devices, process technology and characterization

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[19a-C41-4] Impact of GaN Dry Etching on Polar and Non-polar GaN MIS Interface Properties

〇Koji Yoshitsugu¹, Takahiro Yamada¹, Yuki Takiguchi¹, Shingo Tomohisa¹, Takashi Takenaga¹, Yasuyuki Miyamoto² (1.Advanced Technology R&D Center, Mitsubishi Electric Corp., 2.Tokyo Tech.)

Keywords:

GaN MIS,c-,m-plane