[19a-C41-1~11] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[19a-C41-5] Evaliation of depth profile of net donor density in low dose Al-ion implanted GaN layer to elucidate the origin of donor-like defects formed by ion implantation

〇Hiroko Iguchi¹, Masahiro Horita², Keita Kataoka¹, Tetsuo Narita¹, Hirotaka Watanabe², Shugo Nitta², Yoshio Honda², Hiroshi Amano², Jun Suda² (1.Toyota Central R&D Labs., 2.Nagoya Univ.)

Keywords:

nitride semiconductor,ion implantation,defect

Our previous study suggested that donor-like defects were formed by annealing at 900-1100℃ after implantation of Si-ion implantation. In the present study, depth profiles of net donor densities in samples annealed after Al-ion implantation were examined to elucidate the origin of donor-like defects. The increase in net donor density was observed in the Al-ion implanted region. The result suggests that donor-like defects were also formed by annealing after Al-ion implantation. Donor-like defects are formed regardless of the implanted atoms, suggesting that these defects don't include Si.