[19a-C41-1~11] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C41-6] Stability of Heavily Mg-doped p-type GaN MOS Structures with Low Hole Trap Density Against Thermal Annealing

〇Yuichi Sakagami¹, Takuma Kobayashi¹, Kazuki Tomigahara¹, Mikito Nozaki¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:

GaN,MOS,Hole Trap