[19a-C41-1~11] 13.7 Compound and power devices, process technology and characterization

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-C41-7] Generation of hole traps at SiO₂/p-GaN MOS interfaces by post-deposition annealing

〇Masahiro Hara¹, Kazuki Tomigahara¹, Mikito Nozaki¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:

gallium nitride,MOS structure,hole trap