[19a-C41-1~11] 13.7 Compound and power devices, process technology and characterization

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-C41-8] Impacts of PECVD-SiO₂ deposition temperature on hole traps at p-type GaN MOS interfaces

〇Masahiro Hara¹, Takuma Kobayashi¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Heiji Watanabe¹ (1.Osaka Univ.)

Keywords:

gallium nitride,MOS structure,hole trap