[19a-C42-1~9] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-C42-4] Characteristics on electrochemical etching of high carrier concentration OVPE-GaN

〇(B)Sogo Yokoi¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Tomoaki Sumi², Junichi Takino², Yoshio Okayama², Ryota Ito³, Masahiko Hata⁴, Atsushi Tanaka⁵, Yoshio Honda⁵, Hiroshi Amano⁵, Mihoko Maruyama¹, Masashi Yoshimura⁶, Yusuke Mori¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.Panasonic Holdings Corp., 3.Sumitomo Chemical Co., Ltd., 4.Itochu Plastics Inc., 5.IMaSS Nagoya Univ., 6.ILE, Osaka Univ.)

Keywords:

GaN,electrochemical etching,OVPE