[19a-C42-1~9] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-C42-8] Pulsed Sputtering Growth of GaN film using Sintered Target

〇(M1)Kohei Nomura¹, Koo Bando², Yoshihiro Ueoka², Yoshiro Kususe², Mesuda Masami², Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ, 2.Tosoh Corp)

Keywords:

Sputtering,nitrides semiconductors,Gallium nitride

Homoepitaxial growth of GaN thin films with sintered targets was performed using a pulsed sputtering method to investigate the effect of sputtering conditions on the quality of GaN thin films. We used a c-plane GaN template as a substrate for growth at a constant substrate temperature of 550-600 °C and a constant growth pressure of 10 Pa, and varied the N2/(Ar + N2) ratio (partial pressure ratio) of the supply gas.