[19p-A31-1~18] 17.3 Layered materials

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-11] Selection of transport agents for CVT synthesis for tunnel FET source material

〇Toshinari Sugiyama¹, Satoru Morito², Tomonori Nishimura¹, Kaito Kanahashi¹, Keiji Ueno², Kosuke Nagashio¹ (1.UTokyo, 2.Saitama Univ.)

Keywords:

semiconductor,transition metal dichalcogenides,tunnel FET

We selected an appropriate transport material for CVT synthesis to obtain high-concentration source material for tunnel FETs. We performed low-temperature PL measurements and high-precision Hall effect measurements on nominally 1% Re-substituted WSe₂ synthesized under three conditions: excess Se, I₂ transport agent, and SeCl₄ transport agent, and evaluated the carrier density. The results showed that a carrier density of 1.5×10¹⁹ cm^-3 was obtained when SeCl₄ transport agent was used, which was consistent with the results predicted from the low-temperature PL measurements. The results suggested that SeCl₄ transport agent may be effective for high-concentration doping.