[19p-A31-1~18] 17.3 Layered materials

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A31-12] Evaluation of Nb Impurity Uniformity in Monolayer MoS₂ Transfer Film Using ToF-SIMS

〇Itsuki Tanaka¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Keiji Ueno², Kosuke Nagashio¹ (1.UTokyo, 2.Saitama Univ.)

Keywords:

two-dimensional material,semiconductor,SIMS

Impurity uniformity in monolayer transfer flakes of Nb-doped MoS₂ synthesized by CVT was evaluated by ToF-SIMS; one flake contained uniform Nb, but there were differences in Nb concentration between flakes.