[19p-A31-1~18] 17.3 Layered materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-A31-5] Fabrication of n-type MoS₂ by atomic hydrogenation and TFT application

〇Kecheng Li¹, Chenghao Xu¹, Masamichi Tsuchida¹, Kousaku Shimizu¹ (1.Nihon Univ.)

Keywords:

Two dimensional materials,Molybdenum sulfide,Thin film transistor

In this research, we fabricate MoS2 thin films using the sputtering method with the aim of fabricating large area films. In the previous report, we reported that the thin film contained about 0.1% oxygen and was microcrystalline. Furthermore, first-principles calculations revealed that as a result of the above oxygen being incorporated into the MoS2 thin film, an electron acceptor level is formed just above the valence band. Here, we report the results of converting p-type MoS2 to n-type by treating it with atomic hydrogen.