[19p-A35-1~10] Crystallization and Applications of Thin Film Semiconductors

3:10 PM - 3:40 PM JST(6:10 AM - 6:40 AM UTC)

[19p-A35-5] Effect of hydrogen in a-Si:H film on excimer laser crystallization

〇Akira Heya¹, Koji Sumitomo¹, Naoto Matsuo¹ (1.Univ. of Hyogo)

Keywords:

a-Si:H,excimer laser annealing,crystallization

The effects of hydrogen on laser crystallization of hydrogen-containing amorphous Si (a-Si:H) films were investigated. The crystalline fraction and grain size of the polycrystalline Si films formed by excimer laser annealing increased as the hydrogen concentration in a-Si:H films increased. This is considered to be due to the enhancement of crystal nucleation and growth by the energy generated by desorption of hydrogen from the Si-H₂ bond. By changing the position of the high-concentration hydrogen layer in the film, exfoliation due to hydrogen burst was suppressed.