[19p-A35-1~10] Crystallization and Applications of Thin Film Semiconductors

4:55 PM - 5:10 PM JST(7:55 AM - 8:10 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-A35-8] Highly Reliable Bottom Gate Poly-InO_x:H Thin-Film Transistor

〇Naoki Okamoto¹, Xiaoqian Wang¹, Mamoru Furuta¹ (1.Kochi Univ. of Tech.)

Keywords:

Oxide Semiconductor,Thin Film Transistor

In this study, a bottom-gate poly-InO_x:H TFT was fabricated on a 4-inch glass substrate by photolithography method. A SiN_x/SiO₂ stacked film was deposited for passivation layer by inductively coupled plasma chemical vapor deposition. A positive shift in V_th was observed after post-fabrication annealing(PFA) at T_PFA of more than 200℃, resulting in an E-mode TFT with V_th of 0.58 V after PFA at a T_PFA of 350℃. Furthermore, no change in V_th was observed with stress time under NBTS, making InO_x a strong candidate for fabrication of highly reliable TFTs.