[19p-B1-1~16] 13.3 Insulator technology

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[19p-B1-1] [The 56th Young Scientist Presentation Award Speech] Exploration of elastic properties and atomistic networks of C, N-incorporated silicon oxide films using a universal neural network potential

〇Hiroki Sakakima¹, Keigo Ogawa¹, Sakurako Miyazaki¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

Keywords:

silicon oxide,Universal interatomic potential

Accumulation of mechanical stress and resulting deformations are significant issues for the mechanical reliability of semiconductor devices. Therefore, enhancing the strength of the thin films composing these devices is crucial. This study focuses on improving the material strength of silicon oxide films by incorporating carbon and nitrogen. Molecular dynamics calculations utilizing a universal neural network interatomic potential are employed to elucidate the relationship between the atomic network structure and mechanical properties. In addition to the carbon content mentioned in the Spring Meeting, alongside the results of a similar study on nitrogen content, a comparison of the different elements will also be discussed.